First Year Syllabus in Torino

EU 1st term (26 ECTS):


Solid State Physics and Electronic Devices

Electronic properties of materials


Materials for MEMS and Characterizations of technological processes


Photonic Devices

Finite Element Modelling or Stocastic Processes

EU 2nd term (34 ECTS):


Electronic properties of materials

Physics of technological processes for Micro & Nano systems

Microelectronic devices

Micro & Nano systems

Bioinformatics or Electromagnetic fields and biological tissues: effects and medical applications or Materials for information and communication technologies (6)


Program of Lectures:


Solid State Physics and Electronic Devices (8 ECTS)

Teachers : Paolo Allia (Full Professor, DISMIC, POLITO), Federica Capelluti (Associate Professor, DELEN, POLITO)

The Boltzmann equation for transport, electrical conductivity of metals (0,5 ECTS)
Introduction to phonons. Phonons and electrons in semiconductors (0,5 ECTS)
Surface and interface effects (mainly semiconductor-oriented) (1 ECTS)
Metal-semiconductor junction; Heterostructures and confinement phenomena;  Electrons in metallic thin films
Low dimensionality systems (1,5 ECTS)
Landauer formula; Quantum confinement and excitons;  Resonant tunneling, Coulomb blockade, single-electron transistor; Quantum Hall effect; Solid.state Aharonov-Bohm effect
Elements of spintronics

Elements of p-n junctions: equilibrium diagram, direct and reverse operation, static behaviour, breakdown, dynamic behaviour. (0,5 ECTS)
Metal-semiconductor junction: Schottky barrier, ohmic regime (0,5 ECTS)
Bipolar transistors: transistor effect, transistor parameters, V-I characteristics, Ebers-Moll model and small signals equivalent circuits (1 ECTS)
Field effect transistors: JFET, gradual channel approximation, saturation regime (1 ECTS)
MOS junctions: band diagram, inversion regime, threshold; MOS transistors: characteristics, n-channel and p-channel devices. Power MOS. (1 ECTS)


Materials for MEMS and Characterizations of Technological Processes (6 ECTS)
Teachers : Fabrizio Giorgis (Associate Professor, DIFIS, POLITO),  Paola Rivolo (Researcher, DISMIC, POLITO)

Introduction to materials for MEMS and NEMS technologies: physical and chemical properties of materials for micro and nanotechnologies. Elements of growth techniques. (2 ECTS)
Bulk materials. Thin films and growth technologies ((Physical Vapor Deposition, Chemical Vapor Deposition, Plasma Enhanced Chemical Vapor Deposition, Reactive Ion Etching) (1,6 ECTS)

Introduction to material characterization techniques: chemical composition, structure and morphology by fundamental interactions (photons-matter, electrons-matter, ions/particles-matter) (0,5 ECTS)
Optical microscopy (conventional, confocal, LSOM). Elements of electronic microscopy (1,2 ECTS)
Scanning Probe Microscopies (STM, AFM and SNOM) and related lithographies (1,5 ECTS)
Auger Spectroscopy, Xray Photoemission Spectroscopy, Secondary Ions Mass Spectroscopy, Rutherford Back-Scattering, Elastic Recoil Detection Analysis, Xray Diffractometry, Low-Energy Electron Diffraction, Reflection High-Energy Electron Diffraction (2 ECTS)

Scanning Electron Microscopy and Scanning Probe Microscopy (0,8 ECTS)
Thin film growth by LPCVD, RF-CVD and ECR-PECVD; film thickness measurement and morphological characterization by mechanical profilometry. (0,4 ECTS)


Choice I


Finite Element Modelling (6 ECTS)
Teacher: Giovanni Monegato (Full Professor, DIMAT, POLITO)

Generalities on second order partial differential equations: their classification, and some classical examples arising in mathematical physics.
First order problems and characteristics.
Well-posed problems. (6 hours)
Basic notions from the theory of distributions and function spaces.
Weak derivatives, integration by parts and weak formulation of partial differential equations. (12 hours)
Fundamental solutions and representation theorems for the solutions of linear problems.
Inner and boundary regularity of the solutions.
A priori estimate. (8 hours)
Introduction to the numerical solution of partial differential equations. (2 hours)
Finite-element spaces. Definitions and examples. Some main results on approximation theory. (3 hours)
FEM for elliptic linear problems.
Mesh generation.
Construction of the stiffness matrix.
Iterative methods for sparse linear systems. (12 hours)
FEM for time-dependent linear problems.
Numerical methods for stiff ODE systems.
Finite difference schemes for time discretization. (8 hours)


Stochastic Processes (6 ECTS)
Teacher: Franco Pellerey (Full Professor, DIMAT, POLITO)

Recap of basic probability: probability spaces, random variables and notable distributions, expectations, conditioning (10 hours)
Poisson process: equivalent definitions, generalizations (non-homogeneous, compound, mixed) (10 hours)
Renewal processes: equilibrium distributions and stationary processes (10 hours)
Discrete time Markov chains: transition matrices, classification of states, stationarity and ergodicity, time reversibility, techniques for aggregation of states (12 hours)
Continuous time Markov chains: transitions, birth and death processes, Yule processes, branching processes (10 hours)
Semi-Markov processes (4 hours)
Brownian motions: definitions, properties, applications (4 hours)


Photonic Devices (6 ECTS)
Teacher: Ivo Montrosset (Full Professor, DELEN, POLITO)

Review on materials for optoelectronics, semiconductor lasers, dielectric waveguides. (1 credit)
Coupled mode Theory to model interaction phenomena in photonic devices (1.5 credits)
Photonic Devices ( ex. filters, switches, DFB and DBR lasers, SOA): modeling, design criteria, discussion on experimental results, device realization and characterization. (1.5 credits)
Integrated photonic devices ( tunable lasers, pulse generation, examples of recently proposed integrated circuits) modeling, results discussion and device realization. (2 credits)

Electronic properties of materials (10 ECTS)
Teachers: Giovanni Ghione (Full Professor, DELEN, POLITO), Segio Ferrero (Researcher, DISMIC, POLITO), Giancarlo Cicero (Researcher, DISMIC, POLITO)

Advanced properties of electronic conduction in solids: metals and semiconductors (1 ECTS)
Charge transport in metallic thin film (0,5 ECTS)
Charge transport in semiconductor thin film (0,5 ECTS)
Spin transport, spintronics and related devices (1 ECTS)
Transport in nanostructures (1,5 ECTS)
Superconductivity: theory and application. Superconductor devices (1 ECTS)

Electronic properties of amorphous and crystalline polymers, conjugated polymers (1 ECTS)
Organic conductors and semiconductors (0,5 ECTS)
Optical properties and transport properties of organic semiconductors (1 ECTS)
Micro and nanolithography of polymers and organic materials (0,5 ECTS)
Introduction to organic and polymeric based electronic and photonic devices (1 ECTS)


Physics of technological processes for Micro&Nano Systems and Micro & Nano Systems (12 ECTS)
Teachers: Luciano Scaltrito (Researcher, DISMIC, POLITO), Danilo Demarchi (Researcher, DELEN, POLITO), Matteo Cocuzza (Researcher, INFM-CNR)

Clean room technologies (silicon oxidation, epitaxy, CVD, evaporation, sputtering, electroplating, diffusion, ion implantation) (2 ECTS)
Techniques of lithography, wet etching, dry etching, back-end technologies (2 ECTS)
CMOS processes, introduction to MEMS and NEMS, bulk micromachining, surface micromachining, LIGA, wafer bonding, MEMS complementary technologies, examples of NEMS (2 ECTS)

Basics of microsystem simulation; physical multidomain simulation (0,5 ECTS)
Elements of ‘behavioral’ and FEM simulation. (2 ECTS)
Commercial software simulation and their characteristics (1 ECTS)
Module concept in microsystem technology (0,5 ECTS)
Simulation, design, integration and test in microsystem technology (1 ECTS)
Guided simulation of simple Microsystems (1 ECTS)


Microelectronic devices (6 ECTS)
Teacher: Simona Donati Guerrieri (Associate Professor, DELEN, POLITO)

Semiconductor physics review. (7 h)
Technology roadmap and physical limitations of miniaturization. (3 h)
Advanced modeling for the MOS capacitor and the MOSFET. (15 h)
Submicron MOSFET issues. (15 h)
Assisted laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. (20 h)


Choice II (6 ECTS) (Research Stage or Advanced electronics) Advanced electronics

A list of 6-ECTS courses offered by the Faculty follows:

Advanced design for signal integrity and compliance
Convex optimization and engineering applications
Electromagnetic fields and biological tissues: effects and medical applications
Environmental monitoring, disaster managing and ICT
Innovative wireless platforms for the internet of things
Materials for information and communication technologies
Model-based software design
Multimedia archival techniques
Software-defined radio on open source platforms

NANOQUAD students can freely choose among the above list OR they can pick a 6-ECTS Research Stage with Laboratory activity to be done in a Research Center in Turin or Turin’s neighborhood.